Indications of field-directing and self-templating effects on the formation of organic lines on silicon

Download
  1. Get@NRC: Indications of field-directing and self-templating effects on the formation of organic lines on silicon (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.3562367
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Chemical Physics
ISSN0021-9606
Volume134
Issue11
Article number114707
SubjectGrowth process; Metal contacts; Molecular patterns; Organic nanostructures; Si(1 0 0); Silicon surfaces; Templating effects; Dangling bonds; Electric fields; Nanostructures; Scanning tunneling microscopy; Dimers
AbstractIt has previously been shown that multimolecular organic nanostructures form on H-Si(100)-21 via a radical mediated growth process. In this mechanism, growth begins through the addition of a molecule to a silicon surface dangling bond, followed by the abstraction of a neighboring H atom and generation of a new dangling bond on the neighboring site. Nanostructures formed by this mechanism grow along one edge of a dimer row. Here, we explored the possibility of using lithographically prepared, biased metal contacts on the silicon surface to generate an electric field that orients molecules during the growth process to achieve growth in the perpendicular-to-row direction. The formation of some nanostructures in a direction that was nearly perpendicular to the dimer rows was achieved, whereas such features were not formed in the absence of the field. Analysis of the scanning tunneling microscopy images suggests that the formation of these nanostructures may involve self-templating effects in addition to dangling bond diffusion rather than a straightforward additionabstraction mechanism. These initial results offer some indication that a molecular pattern writer can be achieved. © 2011 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271969
Export citationExport as RIS
Report a correctionReport a correction
Record identifier62d7afa2-bfd4-4a30-a332-b5ee14d674e0
Record created2014-05-14
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)