Evaluation of HfxSi1-xO2 Deposited by Pulse-Mode MOCVD Using HfNEt24, ButMe2SiOH, and O2

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Conference2004 International Electron Devices and Materials Symposia, December 2004, National Chiao-Tung University, Hsinchu, Taiwan
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346452
Export citationExport as RIS
Report a correctionReport a correction
Record identifier638f73bb-c8f8-45ee-8cb9-7987b4216075
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)