Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

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DOIResolve DOI: http://doi.org/10.1134/1.1577763
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TypeArticle
Journal titleJETP letters
Volume77
Issue6
Pages311316; # of pages: 6
AbstractThere is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend nonmonotonically on gate voltage. The spin-orbit scattering rate had a maximum value of 5×1010 s−1 at an electron density of n=3×1015 m−2. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 109 s−1 at an electron concentration of n=6×1015 m−2. This behavior could not be explained by either the Rashba or the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744577
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Record identifier646ee749-de71-4f35-8c62-8bbcfd2ecbc4
Record created2009-10-27
Record modified2016-05-09
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