Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures

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DOIResolve DOI: http://doi.org/10.1557/opl.2012.730
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TypeArticle
Proceedings title2011 MRS Fall Meeting - Symposium CC – Functional Semiconductor Nanocrystals and Metal-Hybrid Structures
Series titleMaterials Research Society Symposium Proceedings; no. 1409
Conference2011 MRS Fall Meeting, 28 November 2011 through 3 December 2011, Boston, MA
ISSN0272-9172
ISBN9781627482233
Pages4348; # of pages: 6
SubjectAuger recombination; Low temperature photoluminescence; PL degradation; PL intensity; Sample temperature; Si/SiGe; Three-dimensional clusters; Three-dimensional nanostructures; Photoluminescence; Three dimensional; Nanostructures
AbstractWe report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation. © 2012 Materials Research Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Measurement Science and Standards; Information and Communication Technologies
Peer reviewedYes
NPARC number21271378
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Record identifier6533bb5f-17f4-449d-b38d-01b0f92b7c5d
Record created2014-03-24
Record modified2016-05-09
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