A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 µm lasers

DOIResolve DOI: http://doi.org/10.1016/S0022-0248(02)02195-4
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TypeArticle
Proceedings titleJournal of Crystal Growth
ConferenceTwelfth International Conference on Molecular Beam Epitaxy, 15-20 September 2002, San Francisco, California, USA
Volume251
Issue1/4
Pages760765; # of pages: 6
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; Security and Disruptive Technologies
Peer reviewedNo
NPARC number12744610
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Record identifier655d3c0b-d8e4-4694-9f8a-dc3af6fd18ac
Record created2009-10-27
Record modified2016-05-09
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