Mg surface treatment for optimizing contact and bulk properties of p-type GaN grown by ammonia-molecularbeam epitaxy

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TypeArticle
ConferenceSymposium on Nitride and Wide Bandgap Semiconductors, 2003
Volume2003-11
Pages201211; # of pages: 11
Publication date
PublisherThe Electrochemical Society
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences; NRC Institute for Fuel Cell Innovation
Peer reviewedNo
NPARC number12346193
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Record identifier6815d8ab-1bb1-4aea-9a73-299e52f1f195
Record created2009-09-17
Record modified2016-05-09
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