Selective area growth of GaN on SiC substrate by ammonia-source MBE

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DOIResolve DOI: http://doi.org/10.1002/1521-396X(200112)188:2<715::AID-PSSA715>3.0.CO;2-F
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TypeArticle
Journal titlephysica status solidi (a)
Volume188
Issue2
Pages715718; # of pages: 4
Subject68.55.Ac; 68.55.Jk; 81.15.Hi; S7.14
AbstractThe feasibility of selective area growth of GaN by ammonia-MBE has been demonstrated on SiC substrates. Under typical growth conditions for ammonia-MBE, GaN was unable to nucleate on the bare SiC surface. However, GaN nucleation could occur instantly if the SiC surface was first seeded with a thin (300 Å) AlN layer prepared by magnetron sputter epitaxy. Thus, GaN growth could occur selectively from a patterned, pre-deposited thin AlN seed layer, and effectively utilizing the exposed SiC surface as a pseudo mask. Evidence of lateral overgrowth was observed by scanning electron microscopy and X-ray diffraction studies. The selectively grown GaN patterns exhibited a strong tendency to form {10equation image1} or {10equation image2} type of facets with excellent smoothness.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328929
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Record identifier688d2377-4664-46ac-a155-44be83424840
Record created2009-09-10
Record modified2016-05-09
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