Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

DOIResolve DOI: http://doi.org/10.1116/1.582234
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TypeArticle
Subjectaluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; optimisation; quantum well devices; semiconductor doping
AbstractWe report the optimization of barrier thickness and well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors covering the 3–5 µm wavelength region. We investigated a series of samples with barrier widths varying from 10 to 50 nm and found that the optimum barrier thickness is about 20 nm. For devices operating at about 100 K, the optimum two-dimensional doping density is found to be in the range 1–2×1012 cm–2, which maximizes the background limited infrared performance temperature and dark current limited detectivity.
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329064
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Record identifier689326fb-9977-4224-b823-17cbb2023314
Record created2009-09-10
Record modified2016-09-29
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