Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2008.12.040
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TypeArticle
Journal titleJournal of Crystal Growth
Volume311
Issue7
Pages16321639; # of pages: 8
SubjectA3. Molecular beam epitaxy; B1. Nitrides; B3. Laser diodes
AbstractWe present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600–700 °C. In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number16891232
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Record identifier68bc6749-e376-499f-aa04-677bacceb0ca
Record created2011-03-26
Record modified2016-05-09
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