Self-assembled SiGe dots

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Proceedings titleQuantum Sensing and Nanophotonic Devices II
Proceedings of SPIE
ConferenceQuantum sensing and nanophotonic devices II, 23-27 January 2005, San Jose, California, USA
Pages358374; # of pages: 17
AbstractWe review recent progress in the growth and characterization of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We describe the use of undulated Si1-xGex islands superlattices for infrared detection at telecommunication wavelengths. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands. We also show how low temperature Si homoepitaxy can lead to a particular surface cusp morphology that may promote dot nucleation.
Publication date
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NRC number1390
NPARC number8900389
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Record identifier69519e69-8a25-4907-aaac-c2acf2471e99
Record created2009-04-22
Record modified2016-05-09
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