Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy

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DOIResolve DOI: http://doi.org/10.1063/1.109784
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume63
IssueAugust 30, 9
Pages12431245; # of pages: 3
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10100234
NRC number1125
NPARC number8899978
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Record identifier69b6bfb5-59ad-4c6a-a204-aef243081f17
Record created2009-04-22
Record modified2016-05-09
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