Optimization of stress-induced pockels effect in silicon waveguides for optical modulators

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DOIResolve DOI: http://doi.org/10.1109/Group4.2013.6644453
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TypeArticle
Proceedings titleIEEE International Conference on Group IV Photonics GFP
Conference2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, 28 August 2013 through 30 August 2013, Seoul
ISSN1949-2081
ISBN9781467358040
Article number6644453
Pages109110; # of pages: 2
SubjectElectrooptic effects; Figure of merits; Pockels effect; Silicon waveguide; Stress-induced; Light modulators; Modulators; Photonics; Silicon; Strain; Waveguides; Optimization
AbstractA method for the optimization of strain-induced Pockels effect in silicon waveguides is proposed. We introduce a new figure of merit and show a 35% enhancement in FOM compared to most efficient reported devices. © 2013 IEEE.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21270906
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Record identifier69b7b6be-a329-4770-b0ec-1765ce033b29
Record created2014-02-18
Record modified2016-05-09
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