GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template

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DOIResolve DOI: http://doi.org/10.1002/1521-3951(200212)234:3<822::AID-PSSB822>3.0.CO;2-K
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TypeArticle
Journal titlephysica status solidi (b)
Volume234
Issue3
Pages822825; # of pages: 4
AbstractThe growth of high quality GaN/AlGaN two-dimensional electron gas on MOCVD GaN template substrates by ammonia-MBE is reported. The homoepitaxial growth required a significantly lower growth temperature than that needed for growth on SiC or sapphire substrates, and yielded significantly improved surface smoothness, and consequently improved electrical characteristics of the two-dimensional electron gas. A low temperature Hall mobility of 14300 cm2/V s and quantum mobility of 2000 cm2/V s were obtained, representing the highest values observed in the GaN/AlGaN structures grown by the ammonia-MBE technique. A correlation between the surface roughness and increased Hall mobility to quantum mobility ratio was observed, suggesting that the surface roughness could be a source of small-angle scattering in these structures.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Steacie Institute for Molecular Sciences; NRC Genomics and Health Initiative
Peer reviewedNo
NPARC number12328590
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Record identifier69bbc3df-6db2-4848-9baf-65100bb68263
Record created2009-09-10
Record modified2016-05-09
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