Silicon–germanium nanostructures for on-chip optical interconnects

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DOIResolve DOI: http://doi.org/10.1007/s00339-009-5111-8
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TypeArticle
Journal titleApplied physics A. Materials scince and processing
ISSN0947-8396
1432-0630
Volume95
Issue4
Pages10151027; # of pages: 13
AbstractSilicon–germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and threedimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3–1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276870
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Record identifier69d56737-297f-40d1-86b3-6e3c3aa1e07b
Record created2015-10-27
Record modified2016-05-09
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