Spin- and valley-dependent analysis of the two-dimensional low-density electron system in Si MOSFETs

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.70.035308
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume70
Issue3
Pages035308
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744697
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Record identifier69eb316e-3a28-449c-8829-7f663cc9f691
Record created2009-10-27
Record modified2016-05-09
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