Low-frequency noise in cadmium-selenide thin-film transistor

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DOIResolve DOI: http://doi.org/10.1063/1.1314887
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TypeArticle
Journal titleApplied Physics Letters
Volume77
Issue14
Pages22342236; # of pages: 3
AbstractLow-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10−3<α<2×10−2 for Si TFTs and amorphous Si.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744245
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Record identifier6bbf480b-e0c1-4486-9851-a6830cfa613c
Record created2009-10-27
Record modified2016-05-09
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