Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode

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DOIResolve DOI: http://doi.org/10.1063/1.124442
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TypeArticle
Journal titleApplied Physics Letters
Volume75
Issue4
Pages563565; # of pages: 3
Subjectaluminium compounds; CCD image sensors; focal planes; gallium arsenide; III-V semiconductors; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; photoconductivity; photodetectors; quantum well devices; spontaneous emission
AbstractThis letter presents the recent developments of large-area focal plane "pseudo" arrays for infrared (IR) imaging. The devices are based on the epitaxial integration of an n-type mid-IR (8–10 μm) GaAs/AlGaAs quantum-well detector with a light-emitting diode. The increase of spontaneous emission by the midinfrared-induced photocurrent is detected with a charge-coupled device camera in the reflection configuration. The mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327907
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Record identifier6c71bbcb-b581-4a36-bf3d-48e3db988a78
Record created2009-09-10
Record modified2016-05-09
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