Characterization and growth of oxide films

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Proceedings titleCorrosion Science
ConferenceInternational Symposium on Oxidation and Corrosion of Advanced Materials and Related Phenomena, 25-26 September 2000, Sendai, Japan
Pages319330; # of pages: 12
SubjectAlloy; Rare earth elements; Electronic materials; Secondary ion mass spectrometry; X-ray photoelectron spectroscopy; Oxidation
AbstractSurface-analytical techniques are useful to characterize oxide films and to study growth processes on metals and semiconductors. This paper will summarize work at the National Research Council of Canada on the high temperature oxidation of nickel, chromium, FeCrAl alloys (with and without yttrium additions), β-NiAl and silicon. The application of secondary ion mass spectrometry, reflection high energy electron diffraction, and transmission electron microscopy is emphasized. Also considered is the thermal oxidation of III–V semiconductors, indium phosphide and gallium arsenide. X-ray photoelectron spectroscopy provides additional useful information on the chemical composition of the oxides. The often complementary information provided by the various techniques leads to (i) a better understanding of oxidation processes and of oxide growth mechanisms on an atomic scale, (ii) interfacial segregation phenomena, and (iii) the role of reactive elements like yttrium in modifying transport processes in oxides.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12743839
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Record identifier6ccf3b17-2031-4495-8d7e-309bbaaccc18
Record created2009-10-27
Record modified2016-05-09
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