Thermal stability and diffusion in gadolinium silicate gate dielectric films

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DOIResolve DOI: http://doi.org/10.1063/1.1412284
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TypeArticle
Journal titleApplied Physics Letters
Volume79
Issue16
Pages26182620; # of pages: 3
AbstractGadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd0.23Si0.14O0.63 films crystallize at temperatures between 1000 and 1050 °C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO2 in deep submicron metal–oxide–semiconductor gates.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12743790
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Record identifier6ddd403b-e6c1-483f-a951-6ce626709c51
Record created2009-10-27
Record modified2016-05-09
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