Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

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DOIResolve DOI: http://doi.org/10.1049/el.2010.0508
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TypeArticle
Journal titleElectronic Letters
ISSN0013-5194
Volume46
Issue16
Pages11441146; # of pages: 3
AbstractUltra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3 dB emission bandwidth up to 140 nm centred at 1100 nm is achieved at a continuous-wave drive-current of 600 mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21268054
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Record identifier6deae275-db71-4043-bf3a-eae1639152ac
Record created2013-04-04
Record modified2016-05-09
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