Biexciton binding energy control in site-selected quantum dots

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DOIResolve DOI: http://doi.org/10.1088/1742-6596/210/1/012019
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TypeArticle
Proceedings titleJournal Of Physics
Conference11th International Conference on Optics of Excitons in Confined Systems (OECS11), September 7-11, 2009, Madrid, Spain
Volume210
AbstractA unique nanotemplate deposition technique is utilized in growth of semiconductor quantum dots which enables precise control over the dot dimensions and nucleation site. Here, we demonstrate tuning of the biexciton binding energy in a single, site-selected InAs/InP quantum dot through manipulation of the nanotemplate dimensions and thus, dot size. A monotonic decrease of the biexciton binding energy from the binding to anti-binding regime through zero is observed with increasing dot size. Piezoelectric fields in large quantum dots are suggested as the mechanism to obtain an unbound biexciton state. The tunability of the biexciton binding energy demonstrated here for a deterministically positioned quantum dot is an important step towards a scalable route in the generation of entangled photon pairs that emit around the telecommunications band of 1.55 µm.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number17131322
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Record identifier6ecb81d6-9257-4fa9-9674-c3d02aa22de2
Record created2011-03-26
Record modified2016-05-09
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