Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED

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DOIResolve DOI: http://doi.org/10.1016/S0169-4332(02)00888-7
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TypeArticle
Journal titleApplied Surface Science
Volume200
Pages1520; # of pages: 6
SubjectGadolinium silicate; Lanthanum silicate; HRTEM; EELS; SAED
AbstractHigh-resolution transmission electron microscopy (HRTEM), electron energy loss spectrometry (EELS) and selected area electron diffraction (SAED) were used to study gadolinium and lanthanum silicate films deposited on Si(1 0 0) substrates using electron-beam evaporaiton from pressed-powder targets. As-deposited films consist of an amorphous silicate layer without an interfacial layer. After annealing at 900°C in oxygen for 2 min, an interfacial SiO2 layer is formed in the gadolinium silicate film, while this interfacial layer is a SiO2-rich lanthanum silicate layer in the lanthanum silicate film. The formation of interfacial silicate layers is thermodynamically more favorable for the lanthanum films than for the gadolinium films. The gadolinium silicate films crystallize at a temperature between 1000 and 1050°C, while the crystallization temperature for the lanthanum silicate films is between 900 and 950°C.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12743996
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Record identifier6f1fbb0d-3313-45cb-8bff-921f2195674a
Record created2009-10-27
Record modified2016-05-09
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