Photoluminescence efficiency of Ge dots self-assembled on SiO₂ and TiO₂

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DOIResolve DOI: http://doi.org/10.1149/1.3367209
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TypeArticle
Proceedings titleNanoscale Luminescent Materials
Series titleECS Transactions; Volume 28(3)
ConferenceNanoscale Luminescent Materials, 217th ECS Meeting, April 25-30, 2010, Vancouver, Canada
ISSN1938-5862
ISBN9781566777933
Pages3350
AbstractSelf-assembled Ge nanodots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO₂ or TiO₂ layer on Si(001). The dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. Using both the k•p and tight binding theoretical models, we have analyzed the PL spectrum in terms of the dot size distribution required to reproduce the observed asymmetric band shape. The peak energy of the PL band reflects the average dot size and its shape depends on the dot size distribution. The observed size distribution determined from transmission electron and atomic force microscopy allowed the determination of the nonlinear increase in the PL quantum efficiency with decreasing dot diameter. In addition, we show it is possible to evaluate the size distribution of Ge dots from their PL energy dependence.
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LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedYes
NPARC number23002568
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Record identifier6f3a8fb7-76d8-47fb-b263-21a75e06a2e4
Record created2017-11-30
Record modified2017-11-30
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