Effective g-factor in high-mobility InGaAs/InP quantum well

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DOIResolve DOI: http://doi.org/10.7498/aps.61.127102
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TypeArticle
Journal titleActa Physica Sinica
ISSN1000-3290
Volume61
Issue12
Article number127102
AbstractHigh-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.
Publication date
LanguageChinese
AffiliationSecurity and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270210
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Record identifier6f547d4e-6aa9-497b-8d27-acefc084f379
Record created2014-01-13
Record modified2016-05-09
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