Visible photoluminescence from helium-ion implanted carbon in silicon

Download
  1. Get@NRC: Visible photoluminescence from helium-ion implanted carbon in silicon (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.360563
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Applied Physics
Volume78
Issue10
Pages61856188; # of pages: 4
SubjectCARBON ADDITIONS; HELIUM IONS; HYDROGENATION; ION IMPLANTATION; PHOTOLUMINESCENCE; RAMAN SPECTRA; SILICON; TEM; WAFERS
AbstractSilicon wafers implanted with 30 keV He ions at room temperature in a low pressure hydrocarbon atmosphere exhibited visible photoluminescence. The samples were characterized by Raman, infrared, transmission electron microscopy, and heavy ion elastic recoil detection analysis. Two different layers were distinguishable on top of the silicon, with the upper layer comprising mostly amorphous carbon, as confirmed on a similarly implanted Be sample. Green photoluminescence was found to arise from the thinner a‐Si1−xCx:H interface layer. Such a buried intermixed layer could be incorporated into a stable visible light emitting device based on crystalline silicon
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328578
Export citationExport as RIS
Report a correctionReport a correction
Record identifier70ee7943-c7ee-41c8-9211-c4f29f10c8a6
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)