Properties of gate-quality SiO2 films prepared by electron cyclotron resonance chemical vapour deposition in an ultrahigh vacuum processing system

Download
  1. Get@NRC: Properties of gate-quality SiO2 films prepared by electron cyclotron resonance chemical vapour deposition in an ultrahigh vacuum processing system (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1557/PROC-386-255
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings title1995 MRS Spring Meeting - Symposium O – Ultraclean Semiconductor Processing Technology and Surface
Series titleMaterials Research Society Symposia Proceedings; no. 386
Conference1995 MRS Spring Meeting: Symposium O: Ultraclean Semiconductor Processing Technology and Surface, April 17-19, 1995, San Francisco, California, USA.
ISSN0272-9172
ISBN1558992898
9781558992894
Pages255
AbstractWe have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327401
Export citationExport as RIS
Report a correctionReport a correction
Record identifier730ffdcd-285f-4a9c-95c2-3ad666f4c992
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)