Strain relaxation in InNyAs1-y films on (100) GaAs

  1. (PDF, 804 KB)
  2. Get@NRC: Strain relaxation in InNyAs1-y films on (100) GaAs (Opens in a new window)
DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for:
Journal titleJournal of Crystal Growth
Pages1828; # of pages: 11
AbstractThe strain relaxation behavior for a series of GaNyAs1−y films was studied by transmission electron microscopy, high-resolution X-ray diffraction and atomic force microscopy. Samples consisting of 200 nm thick GaNyAs1−y epitaxial layers with 0.025≤y≤0.065 (i.e. various misfit strain) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy at 460°C. The GaN0.025As0.975 film shows no misfit dislocations and remains pseudomorphic well beyond the Matthews and Blakeslee's critical thickness, which can be explained by the high activation energy for a homogeneous dislocation nucleation at a smooth film surface. In samples with large N content (y>0.04) relaxation of the built-in strain proceeds through morphological changes involving formation of surface cusps, followed by stacking faults and microtwins. The surface nucleation of 90° partial dislocations is shown to be feasible at the low growth temperature in the presence of cusps due to the stress concentration. The surface roughness is anisotropic between the two 〈0 1 1〉 directions in the low strained films, and this anisotropy of the surface morphology decreases with increase in N concentration.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744125
Export citationExport as RIS
Report a correctionReport a correction
Record identifier731c6fdc-28b9-46ba-8663-44bcf2c57025
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)