Temperature dependence of the free-exciton-emission linewidth in high-purity InP

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.52.R2273
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TypeArticle
Journal titlePhysical Review B: condensed matter and materials physics
Volume52
Issue4
PagesR2273R2276; # of pages: 4
AbstractTemperature-dependent photoluminescence measurements have been performed to study the linewidth of the n=1 free-exciton transition in a high-purity n-type InP epilayer. The spectra reveal that the linewidth of the emission from upper-branch polaritons broadens rapidly when the temperature increases, while that of lower-branch polaritons narrows in the temperature range of 20�30 K. These results, which cannot be explained within the framework of the standard polariton transport model, are well reproduced by a phenomenological model that takes into account polariton scattering by bound excitons, ionized impurities, and phonons.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327160
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Record identifier7325af0c-1281-44b4-a51f-b026ce884452
Record created2009-09-10
Record modified2016-05-09
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