Molecular modulation of conductivity on H-terminated silicon on insulator substrates

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Journal titlesmall
Pages28922899; # of pages: 8
SubjectHall effect; hydrogen termination; molecular adsorption; silicon-on-insulator; surface conductivity
AbstractThe adsorption of a range of molecular species (water, pyridine, and ammonia) is found to reversibly modulate the conductivity of hydrogen-terminated silicon-on-insulator (H-SOI) substrates. Simultaneous sheet-resistance and Hall-effect measurements onmoderately doped (10 15 cm − 3 ) n- and p-type H-SOI samples mounted in a vacuum system are used to monitor the effect of gas exposure in the Torr range on the electricaltransport properties of these substrates. Reversible physisorption of “hole-trapping species, such as pyridine (C 5 H 5 N) and ammonia (NH 3 ) produces highly conductive minority-carrier channels (inversion) on p-type substrates, mimicking the action of a metallic gate in a fi eld-effect transistor. The adsorption of these same molecules on n-type SOI induces strong electron-accumulation layers. Minority/majority channels are also formed upon controlled exposure to water vapor. These observations can be explained by a classical band-bending model, which considers the adsorbates as the source of a uniform surface charge ranging from + 10 11 to + 10 12 q cm − 2 . These results demonstrate the utility of DC transport measurements of SOI platforms for studies of molecular adsorption and charge-transfer effects at semiconductor surfaces.
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AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedYes
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This is a non-NRC publication

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NPARC number17379831
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Record identifier737520cd-d8c8-40d5-a26a-bebb778f9e53
Record created2011-03-23
Record modified2016-05-09
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