Fine structure in the high bias current of vertical quantum dot molecules

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DOIResolve DOI: http://doi.org/10.1063/1.3666364
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TypeArticle
Proceedings titlePHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors
Series titleAIP Conference Proceedings; no. 1399
Conference30th International Conference on the Physics of Semiconductors, ICPS-30, 25 July 2010 through 30 July 2010, Seoul
ISSN0094-243X
1551-7616
ISBN9780735410022
Pages283284; # of pages: 2
AbstractWe outline the properties of fine structure in the high bias (∼10-100 mV) current of a weakly coupled vertical double-dot device close to "pinch-off". Two features of particular interest at 0 T are modulations in the strength along the length of the practically degenerate 1s-2p + and 1s-2p - resonance lines, and a current step bisecting these two resonance lines whose height is very different either side of the two resonance lines. © 2011 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271181
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Record identifier73b7ed4f-86eb-41ac-ac4b-df6192a2873a
Record created2014-03-24
Record modified2016-05-09
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