Characterization of Si[1-x]Ge[x] epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

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DOIResolve DOI: http://doi.org/10.1116/1.589209
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TypeArticle
Journal titleJournal of vacuum science and technology. B
ISSN1071-1023
Volume14
IssueMay 3
Pages16751681; # of pages: 7
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
Identifier10495228
NRC number1173
NPARC number8897657
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Record identifier755596ef-87c7-42df-b735-b9d63d1ecb34
Record created2009-04-22
Record modified2016-05-09
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