Strong potential profile fluctuations and effective localization process in InGaN/GaN multiple quantum wells grown on {10-1m} faceted surface GaN template

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DOIResolve DOI: http://doi.org/10.1063/1.2214211
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TypeArticle
Journal titleJournal of Applied Physics
Volume100
Issue1
Pages013528
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Industrial Materials Institute
Peer reviewedNo
NPARC number12744362
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Record identifier75699883-fb09-4349-8b74-e461e7b25589
Record created2009-10-27
Record modified2016-05-09
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