The Effect of IrO2-IrO2/Hf/LaAlO3 Gate Dielectric on the Bias-Temperature Instability of 3-D GOI CMOSFETs

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DOIResolve DOI: http://doi.org/10.1109/LED.2005.848130
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume26
Issue6
Pages407409; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744299
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Record identifier75da39aa-8372-41b2-8155-25899244d286
Record created2009-10-27
Record modified2016-05-09
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