Interplay between crystal phase purity and radial growth in InP nanowires

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DOIResolve DOI: http://doi.org/10.1088/0957-4484/23/38/385205
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TypeArticle
Journal titleNanotechnology
ISSN0957-4484
Volume23
Issue38
Article number385205
SubjectCondensed matter: electrical, magnetic and optical; Semiconductors; Surfaces, interfaces and thin films; Condensed matter: structural, mechanical & thermal; Nanoscale science and low-D systems
AbstractThe interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires are then grown which exhibit narrow 4.2K photoluminescence linewidths of 3.7meV at 1.490meV, and no evidence of emission related to stacking faults or zincblende insertions.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; Information and Communication Technologies; Security and Disruptive Technologies
Peer reviewedYes
NPARC number21270146
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Record identifier76109713-d1b9-4318-9542-1bc940bce10d
Record created2014-01-06
Record modified2016-05-09
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