Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.361134
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TypeArticle
Journal titleJournal of Applied Physics
Volume79
Issue5
Pages26402648; # of pages: 9
SubjectABSORPTION SPECTRA; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACE STRUCTURE; PHOTOLUMINESCENCE; QUANTUM WELLS; STRAINS; XRD
AbstractWe have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12338009
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Record identifier763c0b75-f36a-4fe2-9c6b-2c59fd3dc4c9
Record created2009-09-10
Record modified2017-03-23
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