Si1-xGex critical thickness for surface wave generation during UHV-CVD growth at 525°C

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DOIResolve DOI: http://doi.org/10.1557/PROC-399-413
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TypeArticle
Proceedings title1995 MRS Fall Meeting - Symposium D – Evolution of Epitaxial Structure and Morphology
Series titleMaterials Research Society Symposia Proceedings; no. 399
Conference1995 MRS Fall Meeting: Symposium D: Evolution of Epitaxial Structure and Morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN9781558993020
1558993029
Pages413
AbstractSeveral Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327236
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Record identifier76b224bc-090a-48fc-b90f-4d37e7ee82ea
Record created2009-09-10
Record modified2016-05-09
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