Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers

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DOIResolve DOI: http://doi.org/10.1109/3.341704
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TypeArticle
Journal titleIEEE journal of quantum electronics
ISSN00189197
Volume31
Issue1
Pages2934; # of pages: 6
Subject1.55 mum; 1.55-?; anisotropic effective mass theory; approximate optical gain formulas; approximation theory; carrier concentration; carrier density; efficient analytical model; emission wavelength; empirical formulas; gallium arsenide; gallium compounds; III-V semiconductors; In1-xGaxAsyP1-y; indium compounds; infrared sources; InGaAsP-InP; InGaAsP-InP material system; laser theory; logarithmic relation; m strained quaternary quantum-well lasers; material compositions; optical gain; peak optical gain; quantum well lasers; quaternary strained quantum-well lasers; semiconductor device models; semiconductor quantum wells; strained quantum-well laser; well width
AbstractWe have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-?m In1-xGaxAsyP1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10292731
NPARC number12333622
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Record identifier77205fd7-690f-4197-a3e1-7032f5853efc
Record created2009-09-10
Record modified2016-05-09
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