Transverse electric dominant intersubband absorption in Si-doped GaInAsN/GaAs quantum wells

Download
  1. Get@NRC: Transverse electric dominant intersubband absorption in Si-doped GaInAsN/GaAs quantum wells (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.2172719
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Applied Physics
Volume99
Issue4
Pages0435141; # of pages: 43514
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Industrial Materials Institute
Peer reviewedNo
NPARC number12744100
Export citationExport as RIS
Report a correctionReport a correction
Record identifier772d4788-4ea9-42d4-b238-ef0d11287b96
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)