Rolled-up 1.55 μm semiconductor quantum dot tube lasers

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DOIResolve DOI: http://doi.org/10.1149/1.3700417
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TypeArticle
Proceedings titleECS Transactions
Conference2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting, 6 May 2012 through 10 May 2012, Seattle, WA
ISSN1938-5862
ISBN9781566779579
Volume45
Issue5
Pages113118; # of pages: 6
SubjectContinuous Wave; InGaAsP; Liquid nitrogen temperature; Optically pumped; Ultra-low threshold; Nanotechnology; Pumping (laser); Semiconductor lasers; Semiconductor quantum dots; Tubes (components); Optically pumped lasers
AbstractWe report on the fabrication and characterization of InGaAsP/InAs quantum dot rolled-up tubes as well as the achievement of a semiconductor tube laser at ∼ 1.55 μn. The optically pumped tube laser operates in continuous wave at liquid nitrogen temperature and shows an ultra-low threshold of ∼1.26 μW. ©The Electrochemical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269540
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Record identifier7737dbb0-44aa-4821-8756-31f69e881ffb
Record created2013-12-12
Record modified2016-05-09
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