Absolute coverage measurements on sulphur-passivated GaAs(100)

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DOIResolve DOI: http://doi.org/10.1016/0039-6028(94)00725-X
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TypeArticle
Journal titleSurface Science
Volume324
Issue2-3
Pages159168; # of pages: 10
SubjectChalcogens; Gallium arsenide; High energy ion scattering (HEIS); Ion-solid interactions; Low index single crystal surfaces; Sulphides
AbstractParticle-induced X-ray emission measurements combined with Rutherford backscattering spectrometry (including channeling) have been used to measure directly the total sulphur coverage for the S-passivated GaAs(100) surface. The ion-induced X-ray measurements show that 1.1 ML (1 ML = 6.26 × 1014 cm−2) of S is found on GaAs(100) after passivation with (NH4)2S, while only 0.55 ML of S is present on the H2Sx-treated GaAs(100) surface. A clearer picture of the S-covered GaAs(100) surface emerges from a consideration of these data in conjunction with current models encompassing surface dimers.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328783
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Record identifier79609157-b2b7-4393-909d-913ac5e4dbbe
Record created2009-09-10
Record modified2016-05-09
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