A quasiclassical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples

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DOIResolve DOI: http://doi.org/10.1016/j.physe.2007.09.134
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TypeArticle
Journal titlePhysica E: Low-dimensional Systems and Nanostructures
Volume40
Issue5
Pages14241426; # of pages: 3
AbstractIn this work we investigate microwave induced resistance oscillations (MIROs) in a GaAs/AlGaAs heterostructure containing a high mobility two-dimensional electron gas (2DEG). We show that MIROs can be explained within a purely classical mechanism based on the Boltzmann equation [L.I. Magarill, I.A. Panaev, S.A. Studenikin, Condens. Matter 7 (1995) 1101]. The MIRO-related transitions can be observed in absorption and we demonstrate it experimentally for the first time using EPR-cavity absorption technique. Next we investigate MIROs and Shubnikov–de Haas (SdH) oscillations at milli-Kelvin temperatures. We find that MIROs persist to approximately three times lower magnetic field as compared with the SdH oscillations, which at temperatures below 50 mK are defined purely by the quantum relaxation time. This finding indicates a possible quasi-classical origin of MIROs.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12743962
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Record identifier79b15d08-c277-439e-9042-254edff82c81
Record created2009-10-27
Record modified2016-05-09
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