Optical properties of InAs/InP planar quantum dot microscavities

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DOIResolve DOI: http://doi.org/10.1557/PROC-737-E7.3
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TypeArticle
Proceedings title2002 MRS Fall Meeting - Symposia E/F – Physics and Technology of Semiconductor Quantum Dots – Nanocrystalline Semiconductor Materials and Devices
Series titleMaterials Research Society Symposia Proceedings; no. 737
Conference2002 MRS Fall Meeting: Symposia E/F: Physics and Technology of Semiconductor Quantum Dots – Nanocrystalline Semiconductor Materials and Devices, 2-5 December 2002, Boston, MA, USA
ISSN0272-9172
ISBN1558996745
9781558996748
AbstractPlanar InAs/InP quantum dot microcavities using multi-layer SiO2/Ta2O5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ∼1meV with the occasional ∼200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12346433
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Record identifier79e5dfa2-fa87-4ee9-bc6b-d42a02be479f
Record created2009-09-17
Record modified2016-05-09
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