Formation of chemically clean and morphologically smooth PtSi/Si interfaces

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Proceedings titleInterface control of electrical, chemical, and mechanical properties: symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.
Series titleMaterials Research Society Symposia Proceedings; no. 318
Conference1993 MRS Fall Meeting, Symposium Ca: Interface Control of Electrical, Chemical, and Mechanical Properties, November 29 - December 3, 1993, Boston, Massachusetts, U.S.A.
AbstractPtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface.
Publication date
PublisherMaterials Research Society
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276804
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Record identifier7a06ff56-bb9e-44b7-a91d-2082550fee74
Record created2015-10-20
Record modified2016-05-09
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