Low-temperature photoluminescence in In-doped CdMnTe/CdTe quantum wells and superlattices

DOIResolve DOI: http://doi.org/10.1117/12.206257
AuthorSearch for: ; Search for: ; Search for:
AbstractMultiple quantum wells and superlattices of CdMnTe/CdTe were grown epitaxially on ZnCdTe using Pulsed Laser Evaporation and Epitaxy for Cd.85Mn.15Te doped with indium and high purity CdTe targets. Photoluminescence was measured in the 4-80 K temperature range. The use of different excitation wavelengths (488 nm and 623 nm) led to depth studies of the structures. In order to determine the degree of indium incorporation in the wells, the results from the multiple layer structures were compared with the photoluminescence from single layers deposited under similar conditions.
PlaceSan Jose, CA, USA
AffiliationNational Research Council Canada; NRC Institute for Chemical Process and Environmental Technology
Peer reviewedNo
NPARC number12328660
Export citationExport as RIS
Report a correctionReport a correction
Record identifier7a432c6b-dd1b-407b-87ea-c28be9472e1b
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)