State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots

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DOIResolve DOI: http://doi.org/10.1006/spmi.1996.0194
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TypeArticle
Journal titleSuperlattices and Microstructures
Volume21
Issue4
Pages541558; # of pages: 18
Subjectquantum dots; optical properties; carrier relaxation
AbstractWe present the first radiative lifetime measurements and magneto-photoluminescence results of excited states in InGaAs/GaAs semiconductor self-assembled quantum dots. By increasing the photo-excitation intensity, excited state interband transitions up ton= 5 can be observed in the emission spectrum. The dynamics of the interband transitions and the inter-sublevel relaxation in these zero-dimensional energy levels lead to state-filling of the lower-energy states, allowing the quasi-Fermi level to be raised by more than 200 meV due to the combined large inter-sublevel spacing and the low density of states. The decay time of each energy level obtained under various excitation conditions is used to evaluate the inter-sublevel thermalization time. Finally, the emission spectrum of the dots filled with an average of about eight excitons is measured in magnetic fields up to 13 Tesla. The dependences of the spectrum as a function of carrier density and magnetic field are compared to calculations and interpreted in terms of coherent many-exciton states and their destruction by the magnetic field.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328986
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Record identifier7adbddca-a665-4816-bd23-b15f5bfe723f
Record created2009-09-10
Record modified2016-05-09
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