Focused-ion-beam damage-etch patterning for isolation of quantum structures in AlGaAs/GaAs

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DOIResolve DOI: http://doi.org/10.1116/1.586997
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TypeArticle
Journal titleJournal of Vacuum Science Technology B
Volume11
Issue6
Pages24162419; # of pages: 4
AbstractA damage-nucleated wet crystallographic etch technique has been developed for AlGaAs. The etch extends beyond the initial patterned region, and is thus able to remove peripheral damage. GaAs is not appreciably affected at the dose required, and hence a GaAs layer may be used as an etch stop. The technique is readily applicable to the generation of quantum wires and dots. Photoluminescence studies of several preliminary dot structures in quantum well material show signals whose strength varies with dot size and with dose.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number19592023
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Record identifier7b8406a1-06f2-4820-ad27-d6b63296f71c
Record created2012-03-02
Record modified2016-05-09
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