Positioned growth of InP nanowires

  1. Get@NRC: Positioned growth of InP nanowires (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1117/12.876196
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
Proceedings titleProceedings of SPIE - The International Society for Optical Engineering
ConferenceQuantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 25 January 2011 through 26 January 2011, San Francisco, CA
Article number79470K
SubjectAu particles; Catalyst-free; Catalyst-free growth; CBE; e-Beam lithography; Growth conditions; Growth modes; InAs quantum dots; InP; InP wafers; Lift-off process; Liquid solids; Mask layer; Nano-meter scale; Optical emissions; quantum dot; Selective area growth; Self-aligned; VLS growth; Catalysis; Catalysts; Chemical beam epitaxy; Gold coatings; Indium arsenide; Semiconductor quantum dots; Silicon compounds; Nanowires
AbstractWe describe two different approaches to growing precisely positioned InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy, one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. Growth is performed on InP wafers which are first coated with 20 nm of SiO 2. These are then patterned using e-beam lithography to create nanometer scale holes in the SiO 2 layer to expose the InP surface. For the VLS growth Au is then deposited into the holes in the SiO 2 mask layer using a self-aligned lift-off process. For the catalyst-free growth no Au is deposited. In both cases the deposition of InP results in the formation of InP nanowires. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO 2 mask. The orientation of the nanowires is also different, <111>B when using Au particles and <111>A when catalyst-free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAs quantum dots grown inside the nanowire. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271061
Export citationExport as RIS
Report a correctionReport a correction
Record identifier7c5e7cb9-83b5-4989-8648-f339e69efdaf
Record created2014-03-24
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)