Fabrication of High Performance GaN Modulation Doped Field Effect Transistors

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DOIResolve DOI: http://doi.org/10.1116/1.582172
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A
Volume18
Issue2
Pages750753; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12330143
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Record identifier7d06a0cf-9b51-437d-a088-5612a2c4931f
Record created2009-09-10
Record modified2016-05-09
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