Developer-free direct patterning of PMMA/ZEP 520A by low voltage electron beam lithography

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DOIResolve DOI: http://doi.org/10.1116/1.3634017
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN1071-1023
Volume29
Issue6
Article number06F303
SubjectDense structures; Direct-patterning; Electron beam resist; Half-pitch gratings; Liquid development; Low-voltage electron beams; Positive tone; Thermal development; Electron beams; Liquids; Reactive ion etching
AbstractThe authors report an approach that has potential to fabricate dense structures without liquid development. Two kinds of positive tone electron beam resist, 950k PMMA and ZEP 520A (Nippon Zeon), were studied for their properties and behaviors while subjecting them to exposure, thermal development, and reactive ion etching. So far, we have successfully patterned 70 nm half-pitch gratings in both 950k PMMA and ZEP 520A without liquid development. © 2011 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271943
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Record identifier7ddec9cc-13e8-463d-a7c9-54b22ad713c1
Record created2014-05-13
Record modified2016-05-09
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