Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer

Download
  1. Get@NRC: Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1049/el:19951045
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleElectronics Letters
Volume31
Issue18
Pages1581
Subject17 mA; 170 mW; 980 nm; circular-grating type; distributed Bragg reflector; electron beam lithography; etch-stop layer; high efficiency operation; InGaAs-GaAs; low threshold current; MBE; MQW structure; strained triple quantum well; surface-emitting DBR lasers
AbstractThe authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17 mA and a pulsed output power >170 mW at ~980 nm wavelength are obtained.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338028
Export citationExport as RIS
Report a correctionReport a correction
Record identifier7f7098af-043a-4e59-9a65-900835666c97
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)